锗掺杂真空蒸镀基板距离对多晶硅薄膜的影响  

Effect of Substrate Distance of Vacuum Evaporation Plating on Microstructure and Morphology of Germanium-Doped Polycrystalline Silicon Film

作　　者：杨萍[1] 王宙[1] 付传起[1] 张庆乐[1] 

机构地区：[1]大连大学表面工程中心,辽宁大连116622

出　　处：《材料保护》2014年第7期33-35,7,共3页Materials Protection

摘　　要：在真空蒸镀多晶硅薄膜中掺入杂质可改善膜的微结构及电特性,目前有关基板距离对所得膜层的影响研究不多。采用真空蒸镀掺杂锗的方法制备出多晶硅薄膜;通过扫描电镜、X射线衍射仪、拉曼光谱仪等研究了基板距离对掺锗多晶硅薄膜的组织、形貌、晶粒尺寸及晶化率的影响。结果表明:随着基板距离的增大,薄膜的晶粒尺寸和晶化率均呈现出先增大后减小的相似趋势;当基板距离为90 mm时,晶粒尺寸显著增大,最大达到0.8μm左右,多晶硅薄膜晶粒形貌、结构性能最好,且具有较高的结晶度,薄膜的晶化率最高可达到85.10%。Germanium-doped polycrystalline silicon film was prepared by vacuum evaporation plating.The effect of substrate distance of vacuum evaporation plating on the microstructure,morphology,grain size,and crystallization ratio of Ge-doped polycrystalline Si film was investigated with a scanning electron microscope,an X-ray diffractometer,and a Raman spectrometer.Results indicated that the grain size and crystallization ratio of the Ge- doped polycrystalline Si film tended to rise initially but declined later with increasing substrate distance.Particularly,the polycrystalline Si film prepared at a substrate distance of 90 mm exhibited considerably increased grain size(the maximum grain size was as much as 0.8 μm);and the film had optimized grain morphology,microstructure and properties,while its crystallization ratio was as much as 85.10%.

关 键 词：真空蒸镀法 多晶硅薄膜 组织 形貌 晶粒尺寸 基板距离 锗掺杂 晶化率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]