ZnO基稀磁半导体材料的最新研究进展  

Research Progress of ZnO-based Dilute Magnetic Semiconductor Materials

作　　者：姬晓旭[1] 王爱华[1] 张萍[1] 

机构地区：[1]南阳师范学院物理与电子工程学院,南阳473061

出　　处：《人工晶体学报》2014年第7期1762-1768,共7页Journal of Synthetic Crystals

基　　金：河南省自然科学基金(132102210048;122300410214;112300410121);南阳师范学院专项项目(ZX2010010;ZX2011007)

摘　　要：ZnO基稀磁半导体是目前最有应用前景的自旋电子器件候选材料之一。室温铁磁性材料的可控制备及其磁性起源是目前自旋电子学急待解决的两个基本问题。本文围绕这两个问题对目前国内外关于ZnO基稀磁半导体材料的实验和理论最新研究进行了综述。ZnO-based diluted magnetic semiconductors is one of the candidate materials which have the most application prospect in spintronic devices. The controllable preparation of room temperature ferromagnetic materials and the origin of ferromagnetism are two basic problems of spintronics. Based on the two problems above,the recent progress in experimental and theoretical studies about ZnO-based dilute magnetic semiconductor materials are reviewed in this paper.

关 键 词：自旋电子学 ZNO 稀磁半导体 室温铁磁性 

分 类 号：O472[理学—半导体物理]