沉积温度对CVD-SiC涂层显微结构的影响  

Effect of deposition temperature on microstructure of SiC coating prepared by CVD process

作　　者：王毅[1] 李洪春[1] 郭春峰[1] 

机构地区：[1]西安航天动力研究所,陕西西安710100

出　　处：《火箭推进》2014年第4期50-56,共7页Journal of Rocket Propulsion

摘　　要：介绍了采用化学气相沉积(CVD)方法在C/SiC复合材料表面制备SiC抗氧化涂层的情况。对不同工艺条件下制备出的SiC涂层,使用SEM,EDS和XRD分析了沉积层的物相和显微结构。结果表明:SiC涂层生长速度随沉积温度升高而升高,晶粒尺寸也随之增大;在较高沉积温度下,可以产生较大的沉积速度,但SiC涂层表面粗糙度将会增大。The process of preparing the anti-oxidation coatings of SiC on the C/SiC composite bythe chemical vapor deposition method at different temperatures is introduced. The phase andmicrostructure of the SiC coatings prepared in different process conditions were analyzed by SEM,EDS and XRD. The results reveal that the deposition speed of SiC coating and the grain size increasewith the raising of temperature. A higher deposition temperature leads to a lost deposition of the SiCcoating, but its surface roughness will be exacerbated.

关 键 词：化学气相沉积 沉积温度 SIC涂层 微观结构 

分 类 号：V258[一般工业技术—材料科学与工程]