催化反应对低磨料浓度化学机械平坦化的影响  

Effect of Catalytic Reaction on the Chemical Mechanical Planarization with Low Abrasive Concentration

作　　者：李炎[1] 刘玉岭[1] 王傲尘[1] 刘伟娟[1] 洪娇[1] 杨志欣[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《固体电子学研究与进展》2014年第4期397-402,共6页Research & Progress of SSE

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省自然科学基金资助项目(E2013202247;F2012202094);河北省教育厅基金资助项目(2011128)

摘　　要：通过低磨料浓度下催化反应对铜膜抛光速率的影响,证实了纳米SiO2胶体作为催化反应物可以极大地提高铜膜表面的化学反应速率。通过浸泡在不同磨料浓度抛光液中的铜电极表面腐蚀电位和腐蚀电流数值,进一步证实了催化反应能够加速凹处钝化膜的生成,并确定了在静态腐蚀条件下催化反应速率转换临界点所对应的纳米SiO2溶胶浓度为0.1vol%和1vol%。根据催化反应对铜晶圆各平坦化参数的影响,确定了低磨料CMP的最佳纳米SiO2溶胶浓度为0.3vol%,此时铜晶圆的抛光速率、台阶消除量、平坦化效率、碟形坑高度和腐蚀坑高度分别为535nm/min、299nm、56%、103nm和19nm。The effect of the catalytic reaction on the copper film polishing rate with low abrasive concentration is stuidied to confirm that： nano SiOz sol acts as the catalytic reactant and sharply speeds up the rate of chemical reaction on the copper surface.The corrosion potential value and the corrosion current value of the copper electrode surface soaked in slurries with different abrasive concentrations further confirm that the catalytic reaction can accelerate the generation of the passive film formed on the concave position and show that the corresponding nano SiO2 sol concentrations at the critical point of catalytic react rate under static corrosion condition are. 0.1 vol% and 1 vol%. According to the effect of the catalytic reaction on each planarization parameters, the best nano SiO2 sol concentration obtained in the CMP process with low abrasive concentration is 0.3 vol% . At the same time, the values of polishing rate, step height removal, planarization efficiency, dishing height and erosion height are 535 nm/min, 299 nm, 56%, 103 nm and 19 nm respectively.

关 键 词：催化反应 低磨料浓度 化学机械平坦化 腐蚀电位 腐蚀电流 台阶高度 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN47