MPCVD法制备石墨烯的研究进展  

RESEARCH PROGRESS OF GRAPHENE PREPARED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

作　　者：游志恒[1] 满卫东[1] 涂昕[1] 阳朔 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北武汉430073

出　　处：《真空与低温》2014年第4期201-208,共8页Vacuum and Cryogenics

摘　　要：微波等离子体化学气相沉积(MPCVD)法是近年来发展起来的制备石墨烯的新方法,具有低温生长、基底材料选择广泛、容易掺杂等优点,逐渐成为制备高质量石墨烯的主要方法。首先通过分析制备石墨烯的几种主要方法(微机械剥离法、Si C外延生长法、化学剥离法、化学气相沉积法)得出MPCVD法相对于其他方法的优势,然后综述了MPCVD法制备石墨烯的研究进展,最后简要列举了MPCVD法制备的石墨烯的应用并对MPCVD法制备石墨烯的发展趋势进行了展望。In recent years, microwave plasma chemical vapor deposition （MPCVD） has been developed as a new method to prepare graphene. With the advantages of low-temperature growth, a wide choice of substrate material, and dop- ing easy, MPCVD gradually becomes the main method for preparation of high-quality graphene. Firstly, several main methods （micro-mechanical peeling, SiC epitaxial growth, chemical stripping, and chemical vapor deposition） for synthe- sizing graphene were analysed and compared with MPCVD, finding that MPCVD has clear superiority. Moreover, re- search progress of MPCVD graphene was overviewed. Lastly, the applications of MPCVD graphene were listed briefly and the development trend of it was previewed.

关 键 词：石墨烯 制备 微波等离子体化学气相沉积 研究进展 

分 类 号：O484[理学—固体物理] TQ165[理学—物理]