GaAs/Si直接键合用GaAs表面化学活化技术  

GaAs Surface Chemical Activation Technology for GaAs/Si Direct Bonding

作　　者：马静[1] 刘雯[1] 杨添舒 时彦朋 杨富华[1] 王晓东[1] 

机构地区：[1]中国科学院半导体研究所集成技术工程研究中心,北京100083

出　　处：《微纳电子技术》2014年第8期523-528,541,共7页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2012CB934204);国家自然科学基金资助项目(61076077;61274066)

摘　　要：研究了GaAs/Si疏水性直接键合技术中GaAs表面化学活化关键工艺,对比分析了不同体积分数的HF和HCl溶液作为表面活性处理剂时对GaAs表面进行活化处理的结果。发现用HCl和H2O溶液处理GaAs晶片得到的表面均方根粗糙度要优于用HF处理得到的结果,并且将处理过的GaAs晶片与Si片进行直接键合,发现用HCl进行表面活化的GaAs晶片与Si片键合的成功率要高于用HF进行表面活化的GaAs和Si键合。在200,300和400℃条件下,采用HCl和H2O体积比为1∶10的溶液处理的GaAs晶片与Si片都成功键合,并且200℃条件下键合后的界面质量较好。The surface chemical activation key technology of GaAs in hydrophobic GaAs/Si direct bonding was studied. The active treatment results of GaAs surfaces were compared and analyzed using surface active treatment agents of HF and HCl with different volume fractions. Then the processed GaAs wafer was bonded with the Si wafer. It is found that the root mean square roughness of GaAs wafer treated with the HCl and H2O solution is better than that with HF solution, and the bonding success rate of GaAs wafer activated with HCI and Si wafer is higher than that of GaAs wafer activated with HF and Si wafer. Under the temperatures of 200, 300 and 400 ℃, the GaAs and Si wafers can be directly bonded by the HCl and H20 solution with the volume propor- tion of 1 ： 10, and the performance of the bonded interface is better at 200 ℃.

关 键 词：疏水性 直接键合 清洗工艺 原子力显微镜 表面均方根粗糙度 

分 类 号：TN305.97[电子电信—物理电子学] TN305.2