液晶光学相控阵子阵列寻址电极的加工工艺  

Processing Technology of Sub-Array Addressing Electrodes of the Liquid Crystal Optical Phased Array

作　　者：尹聿海 徐林 王鹏 罗媛 杨宁 史俊锋 于明岩[2] 陈宝钦[2] 

机构地区：[1]中国南方工业研究院,北京100089 [2]中国科学院微电子所微细加工与纳米技术研究室,北京100029

出　　处：《微纳电子技术》2014年第8期542-547,共6页Micronanoelectronic Technology

摘　　要：基于液晶光学相控阵(LCOPA)电极基板的子阵列连接方案,利用电子束直写和激光直写混合光刻技术,进行了通光区域电极条纹、外围电路和子阵列联络孔的微纳米加工工艺研究。结果表明利用激光直写技术,可以形成最小线宽0.5μm的液晶光学相控阵电极图案,曝光时长48 min,具备可制造性。利用富含导电颗粒的SX AR-PC5000/90.1涂层,可以有效解决电子束在绝缘玻璃基底上直写时由电荷积累所产生的电子束曝光场拼接偏移与火花放电等问题,保证了电子束直接曝光子阵列电极上下导电层之间的联络孔套刻精度。利用特定电子束直写对准标记,解决了绝缘体表面在混合光刻中套刻对位精度问题。Based on the sub-array connection scheme of the liquid crystal optical phased array （LCOPA） electrode substrate, through the hybrid lithography combined with the electron beam lithography and laser beam lithography, the micro/nano processing technologies of the optical re- gion electrode stripe, peripheral circuit and sub-array via hole were studied. The results show that using the laser beam lithography, the LCOPA electrode pattern with the minimum linewidth of 0.5 μm is formed and acceptable with the lithography time of about 48 min. With the SX AR - PC5000/90.1 coating containing conductive particles, the problems of the excursion of electron beam and spark discharge induced by the charge accumulation during the electron beam direct writing on the insulating glass substrate were resolved, and the overlay accuracy of the via holes be- tween up and down conductive layers of sub-array electrodes was ensured. Using the specific electron beam direct writing registration mark, the overlay registration accuracy problem of the insulator surface in the hybrid lithography was resolved.

关 键 词：液晶光学相控阵(LCOPA) 微纳加工 子阵列寻址 电子束直写光刻 激光直写光刻 

分 类 号：TN305.7[电子电信—物理电子学]