单轴应变Si NMOSFET热载流子栅电流模型  

A model of hot carrier gate current for uniaxially strained Si NMOSFET

作　　者：吕懿[1] 张鹤鸣[1] 胡辉勇[1] 杨晋勇[2] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071 [2]北京精密机电控制设备研究所,北京100076

出　　处：《物理学报》2014年第19期296-302,共7页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:JY0300122503);中央高校基本业务费(批准号:K5051225014;K5051225004)资助的课题~~

摘　　要：热载流子效应产生的栅电流是影响器件功耗及可靠性的重要因素之一,本文基于热载流子形成的物理过程,建立了单轴应变硅NMOSFET热载流子栅电流模型,并对热载流子栅电流与应力强度、沟道掺杂浓度、栅源电压、漏源电压等的关系,以及TDDB(经时击穿)寿命与栅源电压的关系进行了分析研究.结果表明,与体硅器件相比,单轴应变硅MOS器件不仅具有较小的热载流子栅电流,而且可靠性也获得提高.同时模型仿真结果与单轴应变硅NMOSFET的实验结果符合较好,验证了该模型的可行性.Hot carrier gate current is one of the factors that influence the power and reliability of metal-oxide-semiconductor field effect transistor（MOSFET）. Based on the physical process of generation of the hot carrier effect, a model of hot carrier gate current for uniaxially strained Si NMOSFET is developed. With that model, the simulation results of hot carrier gate current against stress intensity, gate-source bias, channel doping concentration, and drain-source bias are obtained and analyzed. The relationship between life time of time-dependent dielectric break down（TDDB） and gatesource bias is simulated and analyzed. Results show that the uniaxially strained Si MOSFET not only has smaller hot carrier gate current, but also has more stable reliability as compared with the strainless bulk device. Meanwhile, the simulation results match the experimental results very well, which validates the accuracy of the model.

关 键 词：单轴应变Si 热载流子 栅电流模型 

分 类 号：TN386[电子电信—物理电子学]