基于正交试验的PECVD法沉积氮化硅薄膜工艺参数优化研究  

Optimization of Process Parameters for SiN_x∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design

作　　者：吴晓松[1] 褚学宁[1] 李玉鹏[1] 

机构地区：[1]上海交通大学机械与动力工程学院,上海200240

出　　处：《人工晶体学报》2014年第8期1913-1920,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51475290;51075261);高等学校博士学科点专项科研基金资助课题(20120073110096);上海市科技创新行动计划项目(11DZ1120800)

摘　　要：利用多响应正交试验方法研究了PECVD法沉积氮化硅薄膜的工艺参数的优化问题。鉴于目前针对多输出影响过程,尚无有效的方法进行工艺参数优化这一问题,利用综合评分法对衬底温度、气体总流量、NH3/SiH4流量比、反应腔气体压力、高频电场功率5个对氮化硅薄膜的主要质量特性影响较大的工艺参数进行全局优化,再对不满足质量期望的工艺参数进行部分正交分析,对全局优化的结果进行调整,得到最终的氮化硅镀膜的最优工艺参数。国内某光伏企业的验证试验表明了所提方法的有效性。The parameters optimization approach for SiNx∶ H film deposition by PECVD method were studied through a multi-response orthogonal experimental design. Aiming to solve the problem that there is not an effective method to evaluate the parameters in a multi-response environment,a comprehensive scoring method was designed to obtain a global optimization of total gas flow,substrate temperature,gas flow ratio NH3/SiH4, working pressure in deposition chamber and power of high frequency electromagnetic fields which could prominently influence the quality characteristics of SiNx∶ H film,then a partial orthogonal analysis is conducted to evaluate the parameter which cannot achieve the quality characteristics to get the final optimum parameters. The effectiveness of the proposed approach is elaborated by the verification experiments in a native PV enterprise.

关 键 词：PECVD 氮化硅薄膜 正交试验 工艺参数 

分 类 号：TQ153.1[化学工程—电化学工业] TP391.7[自动化与计算机技术—计算机应用技术]