Ga_2O_3和GaN混合镓源制备GaN纳米线  

Growth of GaN nanowires by using Ga_2O_3 and GaN mixture

作　　者：李佳[1] 吴东旭[1] 罗晓菊[1] 程宏斌[1] 郑学军[1] 

机构地区：[1]上海理工大学材料科学与工程学院,上海200093

出　　处：《电子元件与材料》2014年第10期76-80,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.51272158)

摘　　要：采用Ga2O3/GaN、Ga2O3和GaN三种镓源,通过化学气相沉积(CVD)法,在镀有Ni催化剂的Si(100)基片上制备了GaN纳米线,使用SEM、XRD、EDS、HRTEM和PL对样品的形貌、结构、成分和发光性能进行了表征,研究了镓源与基片距离(生长温度)及催化剂种类对纳米线生长的影响。结果表明,相对于Ga2O3和GaN单一镓源,采用Ga2O3/GaN混合镓源制备出的纳米线表面更加光滑,结晶度更高。此外,GaN纳米线的最佳制备工艺参数为:氨气流量0.03 L/min,催化剂Ni,镓源与基片距离11 cm(生长温度950℃)。GaN nanowires grown on nickel-coated Si（100） substrates were synthesized via the chemical-vapordeposition（CVD） method by using Ga2O3/GaN, Ga2O3 and GaN as the gallium source. SEM, XRD, EDS, HRTEM and PL were used to characterized the morphology, microstructure, composition and optical properties of the samples. Meanwhile, the effects of substrate positions（growth temperature） and different catalysts on the morphology of GaN nanowires were discussed. The results show that higher crystalline GaN nanowires with smoother surface were synthesized by using Ga2O3/GaN mixtures compared to single Ga2O3 or GaN. Moreover, The optimum parameters for the synthesis of GaN nanowires are as follow： NH3 gas flow with the rate of 0.03 L/min, Ni as catalyst and the distance between gallium source and substrate of 11 cm（growth temperature of 950 ℃）.

关 键 词：镓源 化学气相沉积法 氮化镓 纳米线 催化剂 发光性能 

分 类 号：TN304[电子电信—物理电子学] TQ133.51[化学工程—无机化工]