三结砷化镓太阳电池干法刻蚀技术研究  

Isolated Grooves Etching on 3J GaAs Solar Cell by ICP

作　　者：王训春[1] 苏宝法[1] 贾巍[1] 徐建文[1] 姜德鹏[1] 池卫英[1] 雷刚[1] 

机构地区：[1]上海空间电源研究所,上海200245

出　　处：《贵州大学学报（自然科学版）》2014年第4期52-56,共5页Journal of Guizhou University:Natural Sciences

基　　金：上海自然科学基金项目(13ZR1457800;12170700500)

摘　　要：通过采用Cl2/BCl3/Ar作为刻蚀气体对三结砷化镓太阳电池隔离槽干法刻蚀工艺进行研究。针对单参数对刻蚀速率及刻蚀形貌的研究,摸索出最优工艺参数。研究结果表明采用合适的工艺参数,可以实现隔离槽一次刻蚀,并且干法刻蚀技术制备的二极管电性能良好,能经受环境适应性试验和可靠性验证。利用干法刻蚀技术,刻蚀精度大为提高,刻蚀形貌也大为改善,二极管制备合格率提高了2.5%以上。The process of dry etch isolated grooves by Cl2/BCl3/Ar gas was researched for triple-junctions GaAs solar cell.With the study of the influence of the etch velocity and appearance with single parameter,the optimum condition was obtained.The result shows that the isolated groove can be etched completely with one etch condition,the diodes prepared with dry etch method have a good electrical characteristic.Using dry etch method,the etch precision and the etch appearance was improved greatly,the qualification rate of the diodes increased above 2.5 percent.

关 键 词：砷化镓 太阳电池 旁路二极管 干法刻蚀 

分 类 号：TM911[电气工程—电力电子与电力传动]