磁控溅射制备Mo薄膜的优化工艺和组织及性能研究  

Optimal Process, Microstructure and Properties of Mo Films Deposited by Magnetron Sputtering

作　　者：马国政[1] 徐滨士[1] 王海斗[1] 邢志国[1] 张森[1,2] 

机构地区：[1]装甲兵工程学院装备再制造技术国防科技重点实验室,北京100072 [2]河北工业大学,天津300130

出　　处：《稀有金属材料与工程》2014年第9期2221-2226,共6页Rare Metal Materials and Engineering

基　　金：国家杰出青年科学基金(51125023);国家"973"计划(2011CB013403);北京市自然科学基金重大项目(3120001)

摘　　要：基于正交试验设计,采用射频磁控溅射技术在不同工艺条件下制备了一系列纯金属Mo薄膜。以薄膜的纳米硬度和结合强度为评价指标,考察分析了溅射靶功率、基片温度、氩气流量和真空度4个工艺参数对溅射Mo薄膜综合力学性能和组织结构的影响规律及机理。结果表明,所制备的多种Mo薄膜均为立方多晶结构,并在(110)和(220)晶面择优生长。薄膜由细小的"树枝"状颗粒随机堆叠而成,表面呈压应力状态。综合考虑薄膜的沉积质量和沉积效率,提出磁控溅射制备Mo薄膜的较佳工艺参数为Mo靶功率100 W,沉积温度120℃,氩气流量90 cm3/min,真空度0.2 Pa。采用优化工艺制备的Mo薄膜具有良好的结晶状态和均匀致密的组织结构,纳米硬度为7.269 GPa,结合强度高达33.8 N。Based on orthogonal test design, a series of pure Mo films were deposited by RF magnetron sputtering under different processing conditions. Taking nano-hardness and bonding strength of the Mo films as criterions, the effects of four important processing parameters （sputtering power, temperature of substrate, flow of argon and vacuum degree） on the integrated mechanical properties and microstructure of Mo films were studied and its mechanism was also discussed. Results show that all of the films have a cubic polycrystal structure and show obvious preferred orientation in （110） and （220） crystal planes. The films are heaped randomly by lots of small dendritic particles and in compressive stress state. Considering both the quality and efficiency of sputtering deposition, a group of optimum processing parameters （sputtering power of 100 W, depositing temperature of 120℃, argon flow of 90 cm3/min and vacuum degree of 0.2 Pa） for sputtering Mo films was proposed. The Mo films prepared under the optimized processing condition have good crystallinity and compact microstructure, with a high hardness of 7.269 GPa and bonding strength of 33.8 N.

关 键 词：磁控溅射 MO薄膜 正交试验 工艺参数 

分 类 号：TB383.2[一般工业技术—材料科学与工程]