低Al组分In_(1-x)Al_xSb薄膜的MBE生长和优化  

MBE growth and optimization of low Al component In_(1-x)Al_xSb film

作　　者：尚林涛[1] 刘铭[1] 邢伟荣[1] 周朋[1] 沈宝玉[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2014年第10期1115-1118,共4页Laser & Infrared

摘　　要：采用分子束外延的方法进行了低Al组分In1-xAlxSb薄膜的生长和优化。通过在InSb(100)衬底上外延生长一系列不同条件的In1-xAlxSb薄膜,分析总结了衬底的热脱氧特征以及InAlSb薄膜低Al组分(2%左右)的控制,探讨了退火和InSb缓冲层的优化等参数对In1-xAlxSb外延薄膜表面形貌和质量的影响。测试结果表明薄膜质量得到极大改进。Low- aluminium In1- xAlxSb film is growth and optimized by molecular beam epitaxial method. After a series of In1- xAlxSb films were grown on InSb（ 100） substrate under different conditions,the thermal deoxidation characterization of the substrate and the low- aluminium component control（ approximate 2%） were analyzed,and the effect of process parameters such as annealing and InSb buffer layer optimization etc on morphology and quality of the film was discussed. The test results show the quality of the film has a great improvement.

关 键 词：InSb(100) 铝 InAlSb 薄膜生长 优化 

分 类 号：TN213[电子电信—物理电子学]