GaN基HEMT器件的优化设计  

Optimal Design of GaN-Based HEMT Devices

作　　者：冯嘉鹏[1] 赵红东[1] 孙渤[1] 段磊[2] 郭正泽 陈洁萌 姚奕洋 

机构地区：[1]河北工业大学信息工程学院电子材料与器件天津市重点实验室,天津300401 [2]中国电子科技集团公司第十三研究所,石家庄050000

出　　处：《半导体技术》2014年第11期817-821,共5页Semiconductor Technology

基　　金：河北省自然科学基金资助项目(F2013202256)

摘　　要：针对氮化镓(GaN)高电子迁移率晶体管(HEMT)器件自热效应以及电流崩塌效应导致器件性能退化和失效的问题,研究了通过合理改变器件参数尺寸优化GaN基HEMT器件的设计,提高器件性能。通过仿真软件模拟了器件各参数对于GaN器件电学性能的影响,分析了不同衬底构成对GaN HEMT器件自热效应的影响,系统研究了GaN HEMT器件相关参数改变对自热效应及器件电学性能的影响。结果表明:Si及金刚石组成的衬底中减小Si层的厚度有利于减小器件的自热效应,降低有源区最高温度。为提高器件性能以及进一步优化GaN基HEMT器件设计提供了一定的理论参考。For the problems of the device performance degradation and failure caused by the GaN high electron mobility transistor （HEMT） device self-heating effect and current collapse effect, the method of changing the device parameters size to optimize the design of the GaN-based HEMT devices was studied and the device performance was improved. The effects of the device parameters on the GaN device electrical performances were simulated by using simulation software. The impacts of different substrates on GaN HEMT device self-heating effects were analyzed. The effects of the related parameters variations of the devices on the serf-heating effects and electrical properties of GaN HEMT devices were studied systematically. The results show that the thickness reduction of Si layer in the substrate consisting of Si and diamond is helpful to reduce the device self-heating effect and the maximum temperature of active region, which provides a theoretical reference for further improvement device performance and optimization of GaN-based HEMT devices.

关 键 词：氮化镓高电子迁移率晶体管(GaN HEMT) 器件参数 性能 场板 自热效应 

分 类 号：TN325.3[电子电信—物理电子学]