激光激励下微半导体结构的三维温度响应  

PHOTOTHERMAL RESPONSE IN SEMICONDUCTING MICROSTRUCTURE PRODUCED BY LASER EXCITATION

作　　者：徐婕[1] 宋亚勤[1] 康永锋[2] 

机构地区：[1]西安交通大学机械结构强度与振动国家重点实验室,航天航空学院,西安710049 [2]西安交通大学电子与信息工程学院,西安710049

出　　处：《固体力学学报》2014年第5期458-463,共6页Chinese Journal of Solid Mechanics

基　　金：国家自然科学基金(10972169);中央高校基本科研业务费专项资金资助

摘　　要：论文运用耦合的等离子波和热传导模型研究了在激光激励下的半导体微硅试件的温度响应;采用格林函数方法得到了在热化热源、体复合热源和表面复合热源共同作用下三维微硅试件中载流子浓度和温度的解析解;对均布激光和聚焦激光激励下的微硅试件温度响应进行了计算,得到了温度的空间分布及其随激励频率的变化关系.Recently,the photothermal methods are widely used as a detection way in micro-electromechanical system（MEMS）and nano-electromechanical system（NEMS）,especially in the situations where other techniques are not useful.The plasma wave and thermal wave,generated by the absorbed intensitymodulated optical excitation,play a key role in the PT experiments for most semiconducting and microelectronics structures.So,deep study on the photothermal response of a sample under different excitations is very important.In this paper,the green function method was used to solve 3-dimensional coupled plasma wave and heat conduction equations.By this method,the expressions of carrier density and temperature were derived analytically,and the spatial distribution of temperature and its variation with excitation frequency were given graphically for different heat sources.

关 键 词：光热 微半导体结构 格林函数 载流子浓度 温度 

分 类 号：O472.2[理学—半导体物理]