SOI波导与InGaAs/InP光电探测器的集成  

InGaAs/InP Photodetector on SOI Circuitry

作　　者：崔荣[1] 杨晓红[1] 吕倩倩[1] 尹冬冬[1] 尹伟红[1] 李彬[1] 韩勤[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《激光与光电子学进展》2014年第11期18-27,共10页Laser & Optoelectronics Progress

基　　金：国家973计划(2012CB933503);国家863计划(2012AA012202;2013AA013401);国家自然科学基金(61274069;61176053)

摘　　要：成熟的CMOS技术可制备无源光学器件,但高效光源和高性能光探测仍需要III^V族半导体材料。综述了近期III^V族外延片与SOI(silicon-on-insulator)波导集成的键合技术,按键合材料的不同分为无机和有机材料键合。着重分析了各种InGaAs/InP光电探测器与SOI波导集成的光耦合方案,并对其优缺点进行对比。同时给出设计的一种倏逝波耦合的InGaAs/InP光电探测器,用时域有限差分(FDTD)法对器件光学特性进行了模拟,以SOI上有机键合的方式,获得95%的探测器吸收效率,表明该SOI波导集成的光电探测器可实现小体积、低损耗及高响应度的光探测,符合片上光互连系统的要求。CMOS technology can be used for the fabrication of passive optical functionality, but efficient light emission and high performance light detection still require Groups III^V semiconductors. Various kinds of bonding techniques for the integration of Groups III^V semiconductors onto SOI waveguide circuits are introduced, and they can be divided into inorganic material and organic material bonding in terms of bonding materials used. Emphatically, the integrated coupling methods of InGaAs/InP photodetector on SOI circuitry and the characteristics of different coupling methods are analyzed and compared. A design of an evanescently coupled InGaAs/InP photodetector on SOI circuitry is proposed and its optical properties are simulated using finite- difference time- domain（FDTD） method and using organic material as bonding agent, the absorption efficiency of 95% is obtained. The simulation results show that the photodetector on SOI circuitry with small size exhibits low excess loss and high responsivity, which can meet the requirement of optical interconnect on chips.

关 键 词：探测器 InGaAs/InP光电探测器 SOI(silicon-on-insulator)波导 键合技术 倏逝波耦合 

分 类 号：O475[理学—半导体物理]