介质辅助键合Ⅲ-Ⅴ/硅基混合集成金属限制激光器  

Investigation of Ⅲ-Ⅴ on Silicon Adhesively Bonded Semiconductor Lasers with Metal Confinement

作　　者：杨跃德[1] 隋少帅[1] 唐明英 肖金龙[1] 杜云[1] 黄永箴[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点联合实验室,北京100083

出　　处：《激光与光电子学进展》2014年第11期88-93,共6页Laser & Optoelectronics Progress

基　　金：国家863计划(2012AA012202);国家自然科学基金(61061160502)

摘　　要：硅基键合Ⅲ-Ⅴ材料激光器,作为互补氧化物半导体(CMOS)兼容硅基光互连系统中的一个关键元件,近年来引起了人们的高度重视并得到了广泛的研究。金属限制结构可以增强器件对光场的限制,提高界面反射率和工艺容差,从而实现小体积低能耗硅片上集成光源。对金属限制介质辅助键合Ⅲ-Ⅴ/硅基混合集成激光器进行了研究,介绍了该激光器的基本原理和实验方案,并对制作的不同结构激光器的特性进行了分析,该研究工作的开展将有助于实现Ⅲ-Ⅴ/硅基混合集成激光器在低能耗高带宽的硅基光互连中的应用。Recently, the III- V on silicon bonded lasers, as a fundamental component of complementary metal oxide semiconductor（CMOS） compatible silicon optical interconnects, have attracted great attention and been extensively studied. The metallic structure can enhance the optical confinement inside the laser resonator,increase the reflectivity at the boundary and give a large fabrication tolerance. Thus a small-volume low-powerconsumption laser can be achieved with the metallic confinement structure. The principle and experimental scheme for the Ⅲ-Ⅴ on silicon adhesively bonded semiconductor lasers with metal confinement are introduced,and the lasing characteristics are analyzed. Further development of hybrid laser may lay the foundation for the low-power-consumption high-bandwidth optical interconnects.

关 键 词：半导体激光器 晶片键合 III-V/硅基混合集成 金属限制 

分 类 号：TN383[电子电信—物理电子学]