Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser  

作　　者：Xie Sheng Guo Jing Guan Kun Mao Luhong Guo Weilian Qi Lifang Li Xianjie 

机构地区：[1]School of Electronic In formation Engineering,Tianjin University,Tianjin 300072,China [2]The 13th Research Institute of China Electronic Technology Group Corporation,Shijiazhuang 050051,China

出　　处：《Transactions of Tianjin University》2014年第6期402-406,共5页天津大学学报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(No.61106052)

摘　　要：Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.Using beam propagation method(BPM), key optical design parameters of InP/AlGaInAs multiple quantum well(MQW) ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radius and gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm was designed and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side mode suppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwise modes.

关 键 词：semiconductor laser MULTIPLE quantum WELL optical BISTABILITY ALGAINAS 

分 类 号：G4[文化科学—教育学]