直流磁控溅射中矩形平面靶刻蚀形貌的数值计算及优化  

Simulation and Optimization of DC Magnetron Sputtering Conditions of Rectangular Target

作　　者：黄英[1] 李建军[1,2] 张以忱[1] 李傲[1] 

机构地区：[1]东北大学机械工程与自动化学院,沈阳110004 [2]沈阳真空技术研究所,沈阳110042

出　　处：《真空科学与技术学报》2014年第11期1206-1214,共9页Chinese Journal of Vacuum Science and Technology

摘　　要：对普通矩形平面靶的磁场分布、电子运动轨迹和电子分布进行了理论计算。通过磁场的解析表达式,解出电子在磁场中的运动方程,求得并从理论上解释了电子的运动轨迹。由电子的运动轨迹,并运用Monte Carlo方法,求得电子在磁场中的分布,得到电子分布的均值和标准差。本文通过在基片和靶材间加正向电场,改变了电子的运动轨迹和空间分布,优化了矩形平面靶的刻蚀形貌,提高了靶材利用率。The DC magnetron sputtering of a typical rectangular target was physically modeled,emperically approximated,analytically calculated,and numerically simulated to optimize the sputtering conditions. The analytical calculation included the magnetic field distribution,electron distribution and trajectories by solving the classic kinetic equations. The electron distribution and trajectory were also simulated in Monte Carlo method. The calculated and simulated results suggest that DC magnetron sputtering of a rectangular target may be optimized by applying a positive voltage between the substrate and target because the bias voltage has a favorable impact on the electron trajectory and spatial distribution,and effectively increases the utilization of the target.

关 键 词：磁控溅射 矩形靶 MONTE Carlo 刻蚀形貌 利用率 

分 类 号：TN305.92[电子电信—物理电子学] TB43[一般工业技术]