L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n^+-GaN layer by MOCVD  

作　　者：黄杰 黎明 邓泽华 刘纪美 

机构地区：[1]College of Engineering and Technology, Southwest University [2]Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology

出　　处：《Chinese Physics B》2014年第12期508-512,共5页中国物理B（英文版）

基　　金：Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401373);the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004);the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)

摘　　要：High-performance Al Ga N/Ga N high electron mobility transistors（HEMTs） grown on silicon substrates by metal–organic chemical-vapor deposition（MOCVD） with a selective non-planar n-type Ga N source/drain（S/D） regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance（gm） of 247 m S/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.High-performance Al Ga N/Ga N high electron mobility transistors（HEMTs） grown on silicon substrates by metal–organic chemical-vapor deposition（MOCVD） with a selective non-planar n-type Ga N source/drain（S/D） regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance（gm） of 247 m S/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.

关 键 词：Ga N HEMTS S/D（S/D） regrowth MOCVD 

分 类 号：TN304.054[电子电信—物理电子学]