单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究(英文)  

Structure and Optical Properties of CuInSe_2 and Cu_(0.9)In_(0.9)Zn_(0.2)Se_2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

作　　者：王伟君[1] 何俊[1] 张克智[1] 陶加华[1] 孙琳[1] 陈晔[1] 杨平雄[1] 褚君浩[1] 

机构地区：[1]华东师范大学电子工程系,极化材料与器件教育部重点实验室,上海200241

出　　处：《无机材料学报》2014年第11期1223-1227,共5页Journal of Inorganic Materials

基　　金：Shanghai Committee of Science and Technology(11ZR1411400,10JC1404600);National Natural Science Foundation of China(61106064,60990312,61076060)

摘　　要：采用单靶磁控溅射法制备了铜铟硒(CIS)和铜铟锌硒(CIZS)薄膜。XRD表征发现CIZS-300出现了与其它薄膜不同的择优取向,分析认为贫铜的状态和适宜温度可能促使薄膜择优取向从(112)向(220)转化;拉曼光谱在171 cm-1处出现的较强峰,和206 cm-1处出现的较弱峰,分别为A1和B2振动模式,而Zn的掺入导致A1拉曼峰的宽化和蓝移;Zn的掺入使Cu含量改变进而使CIZS禁带宽度增大,这是由于Se的p轨道和Cu的d轨道杂化引起的;SEM测试结果表明CIZS薄膜表面比CIS表面更为紧密、平滑。CulnSe2 （CIS） and Cu0.9In0.9Zn0.2Se2 （CIZS） thin films were deposited by Radio-Frequency （RF） magnetron sputtering process. X-ray diffraction （XRD） results indicate CIZS film deposited at 300℃ （CIZS-300） is （220） pre- ferred orientation which is different from （112） preferred orientation of other films. Cu-poor and appropriate tempera- ture are major factors for （220） preferred orientation of grains. The Raman spectra show a strong peak around 171 cm1 and a weak peak around 206 cm1, which corresponding to A1 and B2 modes. Substitution of Zn for Cu leads to a broadening and blue-shift of A1 Raman mode. The band gap Eopt of CIZS film increases due to a reduced Se p-Cu d interband repulsion with Zn doping. Scanning electron microscope （SEM） measurement demonstrates that the surface morphology of CIZS is more compact and smoother than that of CIS thin films.

关 键 词：磁控溅射 铜铟锌硒 锌掺杂 

分 类 号：TQ174[化学工程—陶瓷工业]