nBn型InAs/GaSb Ⅱ类超晶格红外探测器光电特性研究  

Electrical and Optical Properties of nBn Based on Type-Ⅱ InAs-GaSb Strained Layer Superlattice Infrared Detectors

作　　者：胡锐[1] 邓功荣[1] 张卫锋[1] 何雯谨 冯江敏[1] 袁俊[1] 莫镜辉[1] 史衍丽[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2014年第11期863-867,共5页Infrared Technology

基　　金：国家自然基金重点项目;编号:U1037602

摘　　要：设计了nBn结构的InAs/GaSb II类超晶格红外探测器,从理论和实验两方面对nBn器件的暗电流特性进行了研究,研究结果表明:理论计算的暗电流和实际测试结果趋势一致。另外,研制了p-i-n结构器件并与nBn器件进行了比较,测试结果显示:在77 K温度下,nBn器件的暗电流要比p-i-n器件暗电流小2个量级。温度升高到150 K时,nBn器件暗电流变大2个量级,而p-i-n器件暗电流变大4个量级;nBn器件峰值探测率下降到1/5,p-i-n器件峰值探测率下降2个量级。可见nBn器件适合高温工作,适合高性能红外焦平面探测器的研制。An infrared detector based on type-II InAs/GaSb strain layer superlattice with the nBn design has been designed. Dark current of the nBn device was studied through the theoretic calculation and the experiment. The results show that dark current of the theoretic calculation is consistent with the trend of the experimental results. In addition, the p-i-n device was developed, and compared with the nBn device. Test results present that dark current of the nBn device is two orders of magnitude lower than dark current of the p-i-n device at 77 K. When the temperature rises to 150 K, dark current of the nBn device increases by two orders of magnitude, and dark current of the p-i-n device increases by four orders of magnitude; the specific detectivity D^＊ of the nBn device reduces to 1/5, and the D^＊ of the p-i-n device decreases by over two orders of magnitude. Therefore nBn devices are suitable to work at high temperature, which will be fit to development of high performance infrared focal plane arrays.

关 键 词：NBN 超晶格 INAS/GASB 暗电流 Shockley-Read-Hall 

分 类 号：TN215[电子电信—物理电子学]