PECVD法硅纳米晶体的制备及在线表面改性  

The synthesis and in-flight passivation of silicon nanocrystals via PECVD

作　　者：张珈铭[1] 张念波[1] 张静全[1] 李卫[1] 武莉莉[1] 黎兵[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《西南民族大学学报（自然科学版）》2014年第6期928-934,共7页Journal of Southwest Minzu University(Natural Science Edition)

基　　金：国家高技术研究发展计划(863计划)资助项目(2011AA050515)

摘　　要：通过等离子体增强化学气相沉积法(PECVD)制备粒径大小可以控制的硅纳米晶体,并对制备的纳米晶硅进行了在线表面改性.实验结果表明:成功获得了表面经烃基改性的不同粒径的纳米晶硅.相较于没有改性的纳米晶硅,它具有良好的抗氧化性和抗团簇能力,在有机溶剂中有着很好的分散性.Utilizing plasma-enhanced chemical vapor deposition（PECVD） approaches, the synthesis and in-flight passivaton of size-controllable Si nanoctystals were presented. The results showed that different size silicon nanocrystals were successfully grafted with 1-alkenes. Compared with unfunctionalized silicon particles, they were hydrophobic and had higher oxidation resistance, kinetic stability, which could form a stable dispersion in organic solvents.

关 键 词：纳米晶硅 PECVD 制备 表面改性 

分 类 号：TB3[一般工业技术—材料科学与工程]