量子阱红外探测器衬底完全去除技术研究  

Study on complete elimination of substrate of quantum well infrared photodetector

作　　者：孙海燕[1] 刘海龙[1] 胡小燕[1] 谢珩[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2014年第11期1213-1215,共3页Laser & Infrared

摘　　要：背面减薄技术对于提高量子阱红外焦平面探测器的性能有着重要的意义,通过衬底减薄能够缓解探测器芯片与读出电路的热膨胀失配,提高互连混成芯片可靠性,同时能够有效降低串扰。本文结合机械研磨、化学机械抛光和选择性湿法腐蚀技术,实现了量子阱探测器互连混成芯片的衬底完全去除。Substrate thinning technology has a great significance for raising performance of quantum well infrared de- tector （QWIP）. Through substrate thinning, thermal expansion mismatch between detector chip and ROIC is de- creased,which improves the reliability of chip and reduces the crosstalk. Combined with mechanical polishing,chemi- cal mechanical polishing and selective wet etching, complete elimination of QWIP substrate is accomplished.

关 键 词：GAAS 量子阱红外探测器 选择性腐蚀 衬底去除 

分 类 号：TN214[电子电信—物理电子学]