Si基Ge薄膜共振腔增强型光电探测器的设计与模拟  

Design and Simulation of Resonant Cavity Enhanced Ge Film Photodiode on Si Substrate

作　　者：周志文[1] 沈晓霞[1] 李世国[1] 

机构地区：[1]深圳信息职业技术学院电子与通信学院,广东深圳518172

出　　处：《激光与光电子学进展》2014年第12期212-217,共6页Laser & Optoelectronics Progress

基　　金：深圳市科技计划(JCYJ20120821162230170)

摘　　要：设计了Si衬底上Ge薄膜共振腔增强型光电探测器的器件结构,理论计算了上下反射镜Si/Si O2的对数、吸收区Ge薄膜的厚度、有源区面积等参数对器件的外量子效率、带宽等性能的影响。当器件上下反射镜Si/Si O2的对数分别为2和3,Ge薄膜的厚度为0.46μm,器件的台面面积小于176μm2时,探测器在中心波长1.55μm处的外量子效率达到0.64,比普通结构提高了30倍,同时器件的带宽达到40 GHz。Resonant cavity enhanced Ge film photodiode on Si substrate is proposed, and the ettect of the pair value of SUSiO2 forming the top and bottom mirrors, thickness of the Ge absorption film, and mesa area of the active zone on the characteristics of the device such as external quantum efficiency and bandwidth is theoretically calculated. The optimized structure is as follows： the pair value of Si/SiO2 is 2 and 3 for top and bottom mirrors, respectively, the thickness of Ge film is 0.46 μm and the mesa area is less than 176 μm^2 . Under this condition, an external quantum efficiency of 0.64 at a wavelength of 1.55 μm, which is 30 times larger than the conventional one, and a bandwidth of 40 GHz are achieved.

关 键 词：光电子学 共振腔增强型 光电探测器 锗 

分 类 号：TN315[电子电信—物理电子学]