短沟道无结柱状围栅MOSFET的解析模型  

Analytical Models for Short Channel Junctionless Cylindrical Surrounding-gate MOSFET

作　　者：赵青云[1] 于宝旗 朱兆旻[1] 顾晓峰[1] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122

出　　处：《固体电子学研究与进展》2014年第6期526-530,544,共6页Research & Progress of SSE

基　　金：专用集成电路与系统国家重点实验室开放研究课题基金资助项目(11KF003);中央高校基本科研业务费专项资金资助项目(JUSRP51323B,JUSRP211A37);江苏高校优势学科建设工程(PAPD);江苏省六大人才高峰资助项目(DZXX-053)

摘　　要：通过在柱坐标系下求解二维泊松方程,建立了短沟道无结柱状围栅金属氧化物半导体场效应管的电势模型,并推导了阈值电压、亚阈值区电流和亚阈值摆幅的解析模型。在此基础上,分析了沟道长度、沟道直径和栅氧化层厚度等参数对阈值电压、亚阈值区电流和亚阈值摆幅的影响。最后,利用Atlas软件对器件进行了模拟研究。结果表明,根据解析模型得到的计算值与模拟值一致,验证了模型的准确性。这些模型可为设计和应用新型的短沟道无结柱状围栅金属氧化物半导体场效应管提供理论基础。The potential model for the short channel junctionless cylindrical surrounding-gate （JLCSG） metal-oxide-semiconductor field effect transistor （MOSFET） has been established by solving the two-dimensional Possion＇s equation in the cylindrical coordinates. The analytical models of threshold voltage, subthreshold current and subthreshold slope are then derived. Based on these models, the effects of the channel length, channel diameter and gate oxide thickness on the threshold voltage, subthreshold current and subthreshold slope are investigated. Finally, the device is simulated by Atlas software. The results calculated from the analytical models are in good agreement with the simulation results, verifying the validity of these models. These models can provide theoretical guidelines for designing and using novel short channel JLCSG MOSFETs.

关 键 词：二维泊松方程 无结柱状围栅金属氧化物半导体场效应管 阈值电压 亚阈值区电流 亚阈值摆幅 

分 类 号：TN386.1[电子电信—物理电子学]