基于牺牲层技术的高过载压力传感器芯片  

A Chip of High Overload Pressure Sensor Based on Sacrificial Layer Technology

作　　者：揣荣岩[1] 王健[1,2] 代全 杨理践[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870 [2]沈阳化工大学信息工程学院,沈阳110142

出　　处：《传感技术学报》2014年第12期1615-1621,共7页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(61372019)

摘　　要：提出了一种基于牺牲层技术的高过载压力传感器芯片。这种传感器充分利用了多晶硅机械特性和多晶硅纳米膜的压阻特性优势,提高了传感器满量程输出和过载能力。利用有限元方法设计了仿真模型,通过对弹性膜片应力分布的静态分析和非线性接触分析,给出了提高这种压力传感器满量程输出和过载能力的设计方法。并试制了量程为2.5 MPa的传感器芯片样品。测试结果表明样品的过载压力超过7倍量程,5 V供电条件下,满量程输出达到362 m V。A chip of high overload pressure sensor based on sacrificial layer technology is presented. The sensor takes advantages of polysilicon mechanical and polysilicon nanofilm piezoresistive characteristics to increase its full scale output and overload capacity. A simulation model of the proposed sensor is designed by finite element analysis. With the analyses of static and nonlinear contact for stress distribution on the sensor membrane,a design method is proposed to improve the pressure sensor full scale output and overload capacity. And a 2.5MPa full scale pressure sensor sample is developed. The sample measurement results show that an overpressure of 7 times higher than full scale pressure,a full scale output voltage of 362 mV under a supply voltage of 5 V are achieved.

关 键 词：压力传感器 过载保护 牺牲层技术 多晶硅纳米膜 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]