10A/600V大功率硅基JBS肖特基二极管的制备  

Fabrication of High-Power 10 A /600 V Si-Based Junction Barrier Schottky( JBS) Diode

作　　者：陈菩祥 高桦[1] 李海蓉[1] 刘肃[1] 

机构地区：[1]兰州大学微电子所,兰州730000

出　　处：《电子器件》2014年第6期1026-1029,共4页Chinese Journal of Electron Devices

基　　金：甘肃省科技支撑计划项目(1204GKCA062)

摘　　要：为了弥补传统肖特基二极管漏电流大和反向耐压低的不足,采用栅条P+-N结和肖特基结嵌套形成结势垒肖特基二极管(JBS),终端结构由7道场限环和1道切断环构成。通过模拟确定最优参数后流片试验,同步制备肖特基二极管(SBD)和Pi N二极管作为对比。结果表明:制备的JBS二极管兼备SBD二极管正偏和Pi N二极管反偏的优点。在漏电流密度小于1×10-5A/cm2时,反向耐压达到600 V;正向电流10 A(80.6 A/cm2)时,导通压降仅为1.1V。To compensate the high leakage current and low reverse breakdown voltage of conventional Schottky diode,a JBS diode structure was formed by combining strip P＋-N junction grids and Schottky junction,which terminated by seven floating field limiting rings（ FGRs） and one cutoff ring structure. Simulation was utilized to determine the optimized parameters in fabrication,SBD and Pi N diode were fabricated as contrast. The results showed that JBS diodes behave similar to SBD diodes in the on-state while reverse characteristics similar to Pi N diodes. The obtained JBS diodes were capable of blocking up to 600 V when the leakage current density was less than 1 × 10^-5A/cm^2,and the forward voltage drop at a current density of 80. 6 A/cm^2 is 1. 1 V

关 键 词：肖特基二极管 结势垒肖特基二极管 栅条结构 场限环 反向耐压600 V 

分 类 号：TN315.2[电子电信—物理电子学]