Ca掺杂对CuCrO_2薄膜形成和电学特性的影响  

Effect of Ca-doping on the Formation and Electrical Property of CuCrO_2 Films

作　　者：胡冰[1] 揣雅惠[1] 付洋[1] 李雅丹[1] 沈宏志 张红[1] 杨悦[1] 王一丁[1] 

机构地区：[1]吉林大学电子科学与工程学院,集成光电子学国家重点实验室吉林大学实验区,长春130012

出　　处：《光子学报》2014年第12期27-30,共4页Acta Photonica Sinica

基　　金：国家科技支撑计划(No.2013BAK06B04);国家自然科学基金(No.61077074);科技部863计划(No.2007AA06Z112);吉林省科技发展计划(No.20120707);长春市科技发展计划(No.11GH01)资助

摘　　要：采用溶胶凝胶法制备CuCrCaO2薄膜,研究不同气氛、退火温度下,Ca掺杂量对薄膜的形成和电学特性的影响.在N2环境中1 100℃退火,制得CuCr1-xCaxO2(x=0、0.01、0.03、0.05、0.07)薄膜.测量CuCrCaO2薄膜的X射线衍射,在低浓度Ca掺杂时,薄膜结晶良好,晶格常数a、c和平均晶粒尺寸n随掺杂浓度上升而上升;高浓度Ca掺杂时,有杂相生成,a、c、n重新变小,和X射线衍射分析结果相吻合.另将3%Ca掺杂量,分层旋涂后的薄膜分别在空气和N2中以不同温度快速退火,X射线衍射表明在N2条件下,分层次的掺杂使CuCrCaO2结晶取向趋于单一,并且退火温度越高,择优取向越明显.用霍尔仪测量不同Ca掺杂量薄膜的电学特性,x=0.03时薄膜有最佳电导率1.22×10-1S/cm,比未掺杂的薄膜提高了三个数量级,说明适量Ca掺杂有助于提高薄膜电导率,对应的薄膜载流子迁移率为1.77×1018cm-3,正的霍尔系数表明该材料是P型结构.CuCrCaO2 films were prepared by sol-gel. The effect of Ca-doping on the formation and electrical properties of the films with different environments and annealing temperatures was investigated. The CuCr1-xCaxO2 （x=0,0. 01,0. 03,0. 05,0. 07）films are annealed at 1 100℃ in N2 ,XRD shows at low Ca concentration,the films have good crystallinities, lattice constant a, c and average grain size n increase with Ca concentratiom at high Ca concentration impurity phases generate, makes a, c, n smaller, the results are identical with X-ray Diffraction（XRD）. Besides, 3 % Ca hierarchical-mixed-spin-coating films are annealed quickly with different temperatures in air and N2 respectively. XRD shows hierarchical- mixed-spin-coating leads CuCrCaOz to single crystal growth in N2 and has more obvious preferred orientation with higher annealed temperature. Using Hall instrument to measure films＇ electrical properties with different Ca concentrations. The best conductivity is 1.22 × 10^-1 S/cm when x = 0.03, which is three orders of magnitude higher than not doped films. It is shown that Ca doping helps to improve and the conductivity, the corresponding carrier mobility is 1.77 × 10^18 cm^-3 , which means the material is P type structure.

关 键 词：溶胶-凝胶 掺杂 旋涂 薄膜生长 退火 晶相 分层体系 

分 类 号：O484[理学—固体物理]