退火处理对P型ZnO薄膜光电性能影响的研究  

Impact of Annealing Process on Photoelectric Properties of P-Zn O Films

作　　者：吴炳南[1] 高立华[1] 高松华[2] 

机构地区：[1]三明学院机电工程学院,福建三明365004 [2]三明学院科研处,福建三明365004

出　　处：《中国非金属矿工业导刊》2014年第6期15-17,共3页China Non-Metallic Minerals industry

基　　金：2012年度省级大学生创新创业训练计划项目(编号:ZL1217/CS(sj));福建省自然科学基金资助项目(编号:2012J01016)

摘　　要：ZnO薄膜为重要的第三代半导体材料,因其优异的光电性能在微电子行业及光电方面诸多领域备受关注,ZnO薄膜的P型掺杂是实现ZnO基光电器件的关键。本文利用射频磁控溅射法通过N-Al共掺技术,在普通玻璃衬底上成功生长出P型ZnO透明导电薄膜。探讨了不同退火气氛和不同退火温度对薄膜样品光电性能的影响,研究结果表明:当氮氧比为9∶1、溅射功率为140W、在400℃真空条件下退火时成功制备出性能优越的P型ZnO薄膜,其电阻率为152Ω·cm,薄膜可见光透射率达到90%以上。ZnO film is the third generation ofsemieonducting material,due to its excellent photoelectric property,it has attracted great attention in such fields as microelectronics and photoelectricity.P-type ZnO film through doping is the key step for application in the fields of ZnO-based opoelectrical devices.In this study,P-ZnO transparent conductive films are successfully grown on glass substrate using Al and N codoping method by radio frequency magnetron sputtering,and under different ratios of nitrogen and oxygen,sputtering powers,annealing atmosphere and annealing temperature,photoelectronic properties of film samples are also investigated.The results show that excellent P-ZnO films with a resistivity of 152 Ω · cm and the visible light transmittance above 90％ are obtained by annealing at the ratio of nitrogen to oxygen 9∶1,the sputtering power of 140W and the temperature of 400 ℃.

关 键 词：ZNO薄膜 P型 退火处理 光电性能 

分 类 号：TN304.055[电子电信—物理电子学] O472.4[理学—半导体物理]