Study of the dose rate effect of 180 nm nMOSFETs  

作　　者：何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波 肖志刚 

机构地区：[1]The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology

出　　处：《Chinese Physics C》2015年第1期65-69,共5页中国物理C（英文版）

基　　金：Supported by National Science Foundation of China(11305126)

摘　　要：Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation （STI） is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation （STI） is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

关 键 词：dose rate effect MOSFET ELDRS total dose 

分 类 号：O572.212[理学—粒子物理与原子核物理]