NROM存储器总剂量辐射损伤效应和退火特性  

NROM total dose radiation damage effects and annealing characteristics

作　　者：张兴尧[1,2] 郭旗[1,2] 陆妩[1,2] 于新[1,2] 

机构地区：[1]新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011

出　　处：《核技术》2015年第1期17-22,共6页Nuclear Techniques

摘　　要：对一款商用NROM(Nitride-Read-Only-Memory)存储器进行了钴源辐射和退火试验,研究了NROM的总剂量效应和退火特性。使用了超大规模集成电路测试系统测试了NROM的DC、AC、功能参数,分析了辐射敏感参数在辐射和退火过程中的变化规律,研究了器件功能失效和参数退化的原因。测试结果表明:界面态陷阱电荷引起了电路模块中的电荷泵和灵敏放大器MOS管阈值漂移,进而性能恶化、器件功能失效。退火期间由于界面态陷阱电荷没有发生大量退火,致使电路模块性能没有完全恢复,电流参数没有明显下降。Background： The total dose effect studies for the Silicon-Oxide-Nitride-Oxide-Silicon （SONOS） have not been mainly focused on fail mechanism in circuit. Purpose： A commercial SONOS-based Nitride-Read-Only- Memory （NROM） was irradiated by 60Co γ rays and annealed, Total Ionizing Dose （TID） failure mechanism and annealing characteristics of the device were analyzed. Methods： DC, AC and function parameters of this memory were tested in radiation and annealing by VLSI test system, the radiation-sensitive parameters were obtained through analyzing the test data, and the reason for function failure was analyzed. Results： The study showed that： the threshold of MOS in charge pump and the sense amplifier were drift because of the interface trap charge, and the circuit module performance deterioration led to functional failure of the device. The current parameters were raised rapidly because leakage paths formed in Shallow Trench Isolation （STI）. Conclusion： A little of interface trap charge was annealed during annealing, resulting in incomplete recovery of circuit module performance, and insignificant drop of the current parameters.

关 键 词：NROM存储器 SONOS存储器 总剂量辐射 退火特性 电荷泵 灵敏放大器 

分 类 号：TL82[核科学技术—核技术及应用] O571.33[理学—粒子物理与原子核物理]