MPCVD装置基片台改进对金刚石薄膜均匀性的影响  

The Impact of MPCVD Device Substrate Plarform Improvement on Diamond Film Uniformity

作　　者：田宇迪 汪建华[1] 胡晖[1] 翁俊[1] 

机构地区：[1]湖北省等离子体化学与新材料重点实验室,湖北武汉430073

出　　处：《硬质合金》2014年第5期297-301,共5页Cemented Carbides

摘　　要：通过对实验室自主研发的10 k W新型微波等离子体装置基片台的改进,获得了更高的基片温度,更长的保温时间以及更均匀的基片温度。用直径为80 mm的硅片在改进后的基片台上用MPCVD法沉积大面积金刚石膜。在微波功率为5 k W,沉积气压为5.6 k Pa环境下基片中心获得900℃的基片温度,沉积时间8 h。实验后对硅片中央区域,距离中心20 mm区域,距离基片中心35 mm区域进行对比分析,通过SEM显示三个区域金刚石膜的表面形貌差异很小,通过拉曼光谱观察到在1 332 cm-1处代表金刚石相的特征峰无明显的变化从而确定可金刚石膜在质量上的均匀性,最后对金刚石的厚度表征发现所观察的区域内膜厚变化保持在0.2~0.4μm之间且金刚石呈现柱状生长模式。Through improvement of the substrate platform of home-grown 10 kW microwave plasma CVD reactor, higher and more uniform substrate temperature and longer holding time were obtained. Through the improved substrate platform, diamond thin film was deposited on 80mm Si substrate using microwave plasma chemical vapor deposition （MPCVD） from a gas mixture of methane and hydrogen. On the condition of microwave power of 5 kW and deposition pressure of 5.6 kPa, the substrate center temperature reaches 900 ~C, with the deposition time of 8 hours. Microstructures of the central region of the silicon wafer, 20 mm from the center region and 35 mm from the center region were analyzed and compared. SEM results show that the morphology differences on the surface of the three regions of the diamond film are small. Raman spectra observed at 1332 cm^-1 show that the characteristic peaks of diamond phase have no obvious change, indicating the uniformity of diamond film. Characterization of thickness of the diamond shows that the film thickness changes between 0.2 ~ 0.4 microns and diamond shows columnar growth pattern.

关 键 词：基片台改进 大面积金刚石膜 MPCVD 金刚石薄膜均匀性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]