MOSFET器件热载流子效应SPICE模型  

SPICE model for hot carrier effect of MOSFET device

作　　者：戴佼容 刘斯扬[1] 张春伟[1] 孙陈超[1] 孙伟锋[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《东南大学学报（自然科学版）》2015年第1期12-16,共5页Journal of Southeast University：Natural Science Edition

基　　金：东南大学无锡分校科研引导资金资助项目;东南大学研究生科研基金资助项目(YBPY1403)

摘　　要：为了预测MOSFET器件在热载流子效应影响下的退化情况,建立了一套描述MOSFET器件热载流子效应的可靠性SPICE模型.首先,改进了BSIM3v3模型中的衬底电流模型,将拟合的精确度提高到95%以上.然后,以Hu模型为主要理论依据,结合BSIM3v3模型中各参数的物理意义及其受热载流子效应影响的物理机理,建立了器件各电学参数在直流应力下的退化模型.最后,依据准静态方法将该模型应用于热载流子交流退化模型中.实验数据显示,直流和交流退化模型的仿真结果与实测结果的均方根误差分别为3.8%和4.5%.该模型能准确反映MOSFET器件应力下电学参数的退化情况,且为包含MOSFET器件的电路的性能退化研究提供了模拟依据.To predict the degradation of the MOSFET （metal-oxide-semiconductor field-effect tran- sistor） device under the influence of the hot carrier effect, a reliability SPICE（ simulation program with integrated circuit emphasis）model describing the hot carder effect of MOSFET device is built. First, the substrate current model in the BSIM3v3 model is improved, making the fitting accuracy higher than 95 %. Then, taking the Hu model as the main theoretical basis, the device degradation model of electrical parameters under DC （direct current） stress is set up according to the physical meaning of all the parameters in the BSIM3v3 model and physical mechanism affected by the hot carder effect. Finally, according to the quasi-static method, this model is applied to the hot carrier AC model. The experimental data show that the root mean square errors between the simulation results and the measured results are 3.8% and 4.5 % under DC stress and AC stress, respectively. Therefore, the reliability SPICE model can not only accurately reflect the degradation of electrical parameters of the MOSFET under the stress, but also provide a foundation for simulating the performance degradation of the related complete circuit.

关 键 词：MOSFET 热载流子效应 退化 

分 类 号：TN322[电子电信—物理电子学]