基于4H-SiC的高能量分辨率α粒子探测器  

High-resolution alpha-particle spectrometry based on 4H silicon carbide semiconductor detectors

作　　者：吴健[1,2] 蒋勇[1,2] 甘雷[1,2] 李勐 邹德慧[1,2] 荣茹[1,2] 鲁艺[1,2] 李俊杰[1,2] 范晓强[1,2] 雷家荣[1,2] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]中国1:程物理研究院中子物理重点实验室,四川绵阳621900

出　　处：《强激光与粒子束》2015年第1期151-154,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11205140,11475151);中国工程物理研究院中子物理学重点实验室资助课题(2013AC01,2013BC01);中国工程物理研究院核物理与化学研究所科技创新基金项目(2011CX02)

摘　　要：为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对α粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200V时,其漏电流仅14.92nA/cm2。采用具有5种主要能量α粒子的226 Ra源研究其构成的探测系统对α粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内α粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明：4H-SiC探测系统对该能量范围内α粒子的能量线性度十分优异,线性相关系数为0.999 99。Semiconductor detectors made of 4H-SiC material are desirable for applications in harsh environments with high temperature and/or intense radiation.We report the energy resolution and energy linearity of 4H-SiC semiconductor detector using as an alpha particle spectrometer.The leakage current of the 4H-SiC detector is only 14.92nA/cm2,when a reverse bias of 200 V is applied on it.The energy resolution and energy linearity of 4H-SiC detector are studied using a226 Ra alpha source.The energy resolution of the 4H-SiC detector is 0.61%-0.90%for the 4.8-7.7MeV alpha particles,which is comparable with the energy resolution results of commercial silicon detectors.The energy linearity of the 4H-SiC detector is very attractive,with the linearly dependent coefficient as good as 0.999 99.This work demonstrates the outstanding energy resolution and energy linearity properties of 4H-SiC semiconductor detectors.

关 键 词：能量分辨率 半导体探测器 碳化硅 

分 类 号：TL816[核科学技术—核技术及应用]