YSZ/Al_2O_3复合薄膜高温绝缘层的研究  

YSZ /Al_2O_3 high temperature resistant insulating multilayered thin film

作　　者：杨晓东[1] 张洁[1] 蒋书文[1] 蒋洪川[1] 张万里[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2015年第2期13-16,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.61223002)

摘　　要：采用电子束蒸发、射频磁控溅射、等离子喷涂等方法,在镍基高温合金基底上制备YSZ(质量分数12%Y2O3稳定的Zr O2)、Al2O3复合薄膜结构绝缘层,并研究了复合薄膜结构绝缘层在室温到800℃范围内的绝缘特性,以及高温对复合薄膜晶体结构和表面形貌的影响。结果表明:晶态YSZ/非晶态YSZ/Al2O3结构绝缘层在室温下的绝缘电阻大于1.2 GΩ,在800℃大气环境下有150 kΩ左右的绝缘电阻。在室温到800℃范围内,随温度升高其绝缘电阻呈近指数下降的变化规律。经过在800℃大气环境中热处理8 h,YSZ的立方相结构未发生改变,Al2O3表面十分致密,表明该复合结构绝缘层薄膜具有良好的高温绝缘性能和稳定性。YSZ （mass fraction of 12%Y2O3 stabilized ZrO2）, Al2O3 insulating multilayered thin film was fabricated on nickel base alloy substrate by electron beam evaporation,RF magnetron sputtering, plasma spraying and etc. The insulating properties of the multilayered thin films from room temperature to 800℃ were studied, as well as the effects of annealing at high temperature on the crystal structure and surface morphology of insulation layer. The results show that the multilayered thin film of crystalline YSZ/amorphous YSZ/Al2O3 has an insulation resistance more than 1.2 GΩ at room temperature and about 150 kΩ at 800℃ air oven. Ranging from room temperature to 800 ℃, the insulation resistance decreases exponentially while the temperature increases. After annealing at 800 ℃ for 8 h, YSZ cubic phase structure does not change, and the surface of Al2O3 keeps compact. These results suggest that the multilayered thin film has good high temperature insulation performance and stability.

关 键 词：磁控溅射 电子束蒸发 AL2O3 YSZ 复合薄膜结构 高温绝缘 

分 类 号：O484.42[理学—固体物理]