InAs/InP量子点激光器中欧姆接触合金层特性研究  

Characteristic study of ohmic contact alloy layer in InAs/InP quantum dot lasers

作　　者：李世国[1] 龚谦[2] 曹春芳[2] 王新中[1] 沈晓霞[1] 周志文[1] 张卫丰[1] 范金坪[1] 

机构地区：[1]深圳信息职业技术学院电子与通信技学院,广东深圳518172 [2]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050

出　　处：《光电子．激光》2015年第1期30-34,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(62104058);广东省自然科科学基金(S2013010011833);深圳市科技创新计划(JCYJ20130401095559823)资助项目

摘　　要：合金层与InAs/InP量子点激光器的接触电阻对激光器的性能有很大影响,而接触电阻的大小与合金材料、退火温度和退火时间有关。本文采用Au/Ni/Au/Ge做InAs/InP量子点激光器的欧姆接触合金层,通过改变退火温度和退火时间调节量子点激光器中接触电阻的阻值。实验发现,退火时间对接触电阻的改变不大,但是提高退火温度却能极大地降低接触电阻的阻值。实验获得了Au/Ni/Au/Ge合金层与InAs/InP量子点激光器最佳欧姆接触条件,通过矩阵传输法测得相应接触电阻率为1.34×10-6Ω·cm2。在此条件下,制备激射中心波长为1.577μm的多模量子点激光器,室温下单面最大输出功率达到和超过39mW。Ohmic contact resistance between InAs/InP quantum dot lasers and metal has a great impact on lasers＇ performance. The value of contact resistance has a relationship with metal, annealing tempera ture and annealing time. By taking metal as Au/Ni/Au/Ge, the ohmic contact resistance of InAs/InP quantum dot laser is adjusted by changing the annealing temperature and annealing time. We find that the annealing time has a little influence on resistance. In contrast, the value of contact resistance decreases quickly with the increase of annealing temperature. A suitable condition between InAs/InP quantum dot lasers and metal is finally obtained and exhibits a resistivity of 1.34 ×10^-6Ω·cm^2 by a transfer matrix method. At the same time,taking this as a processing condition,an InAs/InP quantum dot laser with its multi-mode emission at a center wavelength of 1. 577 μm is fabricated. At room temperature, the laser has one facet power more than 39 mW under continuous wave mode.

关 键 词：量子点 激光器 接触电阻 合金化 

分 类 号：TN248.4[电子电信—物理电子学]