原子层沉积技术在微纳器件中的应用研究进展  

Progress in Application Research of Atomic Layer Deposition in Micro-nano Devices Field

作　　者：李惠琴[1,2] 陈晓勇[1,2] 王成[1,2] 穆继亮[1,2] 许卓[1] 杨杰[2] 丑修建[1,2] 薛晨阳[1,2] 刘俊[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术重点实验室,太原030051

出　　处：《表面技术》2015年第2期60-67,共8页Surface Technology

基　　金：国家自然科学基金重点支持项目(91123036);国家自然科学基金杰出青年基金(51225504);国家自然科学基金(91123016)~~

摘　　要：原子层沉积(ALD)是一种新型的精确表层薄膜制备技术,具有沉积面积大、薄膜均匀、膜厚纳米级可控生长、低温性等特点,适用于纳米多孔和高深宽比基底材料,可应用于三维微纳结构器件的功能薄膜材料制备,广受国内外学术界和工业界的关注。综述了ALD技术发展历史和技术原理,介绍了ALD技术在微纳器件中的应用进展,涉及半导体微纳集成电路、微纳光学器件、微纳米生物医药等高新技术领域,对ALD技术当前存在的问题进行了分析,并展望了未来发展方向。Atomic layer deposition（ ALD） is a new type of accurate surface thin film preparation technique,which has several characteristics such as depositing large-area uniform films,making the film thickness control at nanometer level feasible,and lower deposition temperature. This new technique is suitable for the complicated nano-porous and high aspect ratio substrate materials,and can be applied in the preparation of functional film materials for 3D micro-nano devices. Now great attention of widespread academic and industry has been paid to ALD technology. The development history and related working principles of ALD technology were reviewed in this paper. Especially,the application progress of ALD technique in the micro-nano devices,including semiconductor integrated circuit,micro and nano optics and biomedical field,was introduced in the paper. Meanwhile,the existing problems of ALD technique and its future development tendency were discussed.

关 键 词：原子层沉积 薄膜技术 高深宽比结构 纳米多孔结构 微纳结构器件 

分 类 号：O484.4[理学—固体物理]