功放芯片热分析及散热片结构优化  

Thermal Analysis of Power Amplifier and Structural Optimization Design of Heat Sink

作　　者：盛重[1] 陈晓青[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2015年第2期44-48,共5页Electronics & Packaging

摘　　要：通过红外热像仪测量Ga As功率放大器芯片的结温可知,温度最高点出现在芯片的栅条上,红外热像仪的放大倍数会导致芯片结温的差异性,正确选择测量的距离系数和放大倍数,可以提高红外热像仪的测温准确性。采用Flotherm软件仿真,并与试验值比较,两者的误差低于6%,由此验证了仿真的可靠性。运用Flotherm软件对T/R组件的散热片优化处理可知,散热片底板对温度影响较小,随着散热片数目的增加,温度逐渐降低,直到散热片的数目阻碍了空气流动,温度开始上升。The junction temperature of GaAs power amplifier is measured by Infrascope Ⅱ, and the highest temperature is found on the gate in power amplifier. The difference of junction temperature is affected by the amplify multiple of Infrascope Ⅱ, and the veracity of junction temperature is improved by select distance coefficient and amplify multiple accurately. Comparison with the simulation value and experimentation value, and the error of them is less than 6%. The heat sink of T/R module is optimized by Flotherm, the temperature is affected less by base thickness, with the number of pins increased, the temperature gradually fall, until the number of pins block the air flow, the temperature eo back.

关 键 词：红外热像仪 芯片结温 热仿真 散热片 

分 类 号：TN305.94[电子电信—物理电子学]