移去电子阻挡层对双蓝光波长LED性能的影响  

Effect of Removing Electron-blocking Layer on Performance of Dual-blue Wavelength Light-emitting Diodes

作　　者：严启荣[1] 田世锋[1] 章勇[2] 

机构地区：[1]广东省理工职业技术学校,广州510500 [2]华南师范大学光电子材料与技术研究所,广州510631

出　　处：《电子与封装》2014年第11期45-48,共4页Electronics & Packaging

摘　　要：采用数值分析方法进行模拟分析In Ga N/Ga N混合多量子阱中移去p-Al Ga N电子阻挡层对Ga N基双蓝光波长发光二极管(LED)性能的影响。结果发现,与传统的具有p-Al Ga N电子阻挡层的双蓝光波长LED相比,移去电子阻挡层能有效地改善电子和空穴在混合多量子阱活性层中的分布均匀性,实现电子空穴在各个量子阱中的均衡辐射。在小电流驱动时,移去电子阻挡层器件的发光功率要明显优于具有电子阻挡层的器件;而在大电流驱动时,电子阻挡层能有效地减少电子溢流,改善器件的发光效率。The effect of removing electron-blocking layer（EBL）on the physical properties of dual-blue wavelength light-emitting diode（LED）is investigated numerically. The results show that compared with the dual-blue LED with a p-type AlGaN EBL, it can improve the distribution of electrons and holes more uniformly in the multiple quantum wells（MQWs）and realize the radiation balance between dual-blue light by removing the p-type AlGaN EBL. The light output power of the LED without EBL is superior to that of the LED with EBL at the low injection current. However, the leakage current can be reduced by the EBL with the injection current increasing, so the efifciency droop will be improved.

关 键 词：电子阻挡层 双蓝光波长 InGaN/GaN量子阱 光谱 

分 类 号：O242.1[理学—计算数学]