衬底温度对磁控共溅射制备的Zn(O,S)薄膜结构和光电性能的影响  

Effect of Substrate Temperature on Structure and Photoelectric Properties of Zn(O,S) Thin Films Deposited by Magnetron Co-sputtering

作　　者：彭柳军[1,2] 杨雯[1,2] 陈小波[1,2] 自兴发 杨培志[1,2] 宋肇宁 

机构地区：[1]云南师范大学可再生能源材料先进技术与制备教育部重点实验室,昆明650092 [2]云南师范大学太阳能研究所,昆明650092 [3]美国托莱多大学物理与天文系,托莱多43606

出　　处：《人工晶体学报》2015年第1期38-42,54,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(U1037604)

摘　　要：采用磁控共溅射沉积法,以氧化锌和硫化锌为靶材,在不同衬底温度下制备了Zn(O,S)薄膜。采用X射线衍射仪、原子力显微镜、紫外-可见-近红外分光光度计、霍尔测试仪和拉曼光谱测试仪对Zn(O,S)薄膜进行了结构和光电特性研究。结果表明:Zn(O,S)薄膜具有六方纤锌矿结构,属于二模混晶;在可见-近红外波段的吸收率小于5%;其为N型半导体,电学特性随衬底温度的变化而变化;衬底温度为200℃时制备的厚度为167 nm的Zn(O,S)薄膜的载流子浓度达到8.82×1019cm-3,迁移率为19.3 cm2/V·s,表面呈金字塔结构。Zn（O,S） thin films were deposited by magnetron co-sputtering using ZnO and Zn S as targets under different substrate temperature. The structure,optical and electrical properties of films were studied by means of XRD, AFM, Raman spectrometer, UV-Vis-NIR spectrophotometer and Hall measurement system. The results show that these films are two-mode mixed crystals with a hexagonal wurtzite structure; the optical absorption of the films is lower than 5% in the range of visible to nearinfrared spectral region; they are n-type semiconductors,and the electrical properties of them were obviously different with different sputtering substrate temperature; the carrier concentration and hall mobility of the film with 167 nm thickness deposited under 200 ℃ is 8. 82 × 10^19cm^- 3and 19. 3 cm2/V·s,respectively,and the film has a pyramid shaped surface structure.

关 键 词：Zn(O S)薄膜 磁控共溅射 衬底温度 光电性能 

分 类 号：O484[理学—固体物理]