用于增强薄膜电池抗反射的微半球孔阵列研究  

Research on Micro Hemispherical Hole Arrays of the Enhanced AntiReflection in Thin Film Solar Cells

作　　者：李新鹏[1,2] 王庆康[1,2] 李海华[1,2] 

机构地区：[1]上海交通大学电子信息与电气工程学院微米纳米加工技术国家级重点实验室,上海200240 [2]上海交通大学电子信息与电气工程学院薄膜与微细技术教育部重点实验室,上海200240

出　　处：《微纳电子技术》2015年第2期85-88,共4页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2011AA050518)

摘　　要：为了改善薄膜太阳电池表面抗反射特性,提高其对光的吸收率,在玻璃基体上制备了一种新的微纳抗反射结构,即微半球孔阵列,其周期约为10μm、深度约5μm。测试了微半球孔阵列结构的光学特性,得到这种结构的平均反射率约为1.7%,同平板无结构的玻璃相比,平均反射率降低了约6%。由测试结果可知,微半球孔阵列结构的抗反射性能得到改善,增强了薄膜太阳电池对光的捕获能力。采用紫外光刻、离子束刻蚀与湿法刻蚀相结合的工艺,整个制备工艺较简单,成本低廉,可以实现大面积应用。A new micro-nano anti-reflective structure,i.e.the micro hemispherical hole array,was fabricated on a glass substrate to improve the anti-reflective properties of the surface of the thin film solar cell and enhance its absorption.The period and depth of the hemispherical hole arrays are about 10μm and 5μm,respectively.Then the optical property of the micro hemispherical hole arrays was tested.The test result shows that its average reflectivity is about 1.7%.Compared with the bare glass,the average reflectivity is reduced by about 6%.And the micro hemispherical hole arrays improve the antireflection properties and enhance the ability of capturing solar light.The entire fabrication process including the UV lithography,ion beam etching（IBE）and wet etching is simple and low cost,and can realize the large scale application.

关 键 词：微半球孔阵列 抗反射 反射率 离子束刻蚀 薄膜太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]