一种高带宽NP型CMOSAPD的研究  

NP type CMOS APD with high frequency bandwidth

作　　者：王巍[1] 王川[1] 颜琳淑 杜超雨 王婷[1] 王冠宇[1] 王振[1] 冯世娟[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《红外与激光工程》2015年第2期699-704,共6页Infrared and Laser Engineering

基　　金：重庆市电子产业发展基金

摘　　要：提出了一种高带宽的硅基CMOS雪崩光电二极管(APD)器件。该器件在N阱/P衬底基本结构的基础上,增加一个N型深掩埋层,并在该掩埋层单独加上电压,以减小载流子的输运时间。通过理论分析确定了器件的结构参数,通过器件性能的仿真分析对相关参数进行了优化设计。仿真结果表明:采用标准0.18μm CMOS工艺,所设计的APD器件的窗口尺寸大小为20μm×20μm,在反向偏压为16.3 V时,器件的雪崩增益为20,响应度为0.47 A/W,3 d B带宽为8.6 GHz。A newly modificated silicon（Si） avalanche photodetector（APD） desinged by standard complementary metal-oxide-semiconductor（CMOS） process was proposed in this paper. The basic structure of the Si APD which was formed by N-well/P-substrate was modificated with a deep N well below space charge area, and a independent voltage was applied on the deep N well to minish the transit time of electron hole pairs. The diffusion velocity and the drifting velocity can be improved at the same time, therefore, the 3-d B bandwidth will increase. The device parameters of CMOS APD were calculated with theoretical analysis, and the performance of the CMOS APD was optimized with SILVACO simulation, including technology simulation and device simulation. The simulation results show that when the window size of designed APD is 20 μm ×20 μm and when biased at 16.3 V, the APD achieves avalanche gain of 20, the best responsivity of 0.47 A/W,the 3 d B bandwidth of 8.6 GHz.

关 键 词：雪崩光电二极管 CMOS APD 带宽 

分 类 号：TN722[电子电信—电路与系统]