一种应用于脉冲超宽带接收机的高增益LNA  

A High Gain LNA for IR-UWB Receiver

作　　者：沈传魁[1] 黄鲁[1] 方毅[2] 

机构地区：[1]中国科学技术大学电子科学与技术系,合肥230027 [2]中国科学技术大学信息科学实验中心,合肥230027

出　　处：《微电子学》2015年第1期10-13,共4页Microelectronics

基　　金：国家科技重大专项"基于脉冲体制的多媒体终端高速数据无线传输系统研发和示范"(2011ZX03004-002-01)

摘　　要：基于SMIC 0.13μm CMOS工艺,设计了一种应用于脉冲超宽带无线通信系统接收机的高增益低噪声放大器（LNA）。该LNA工作在6~9GHz频段,单端输入,差分输出,采用电容交叉耦合与电流复用技术提高了增益,实现了低功耗性能。仿真结果表明,LNA电路工作在7.5GHz中心频率时,增益高达46dB,噪声系数为3.05dB,输入端回波损耗为-12.5dB,输出端回波损耗为-16.7dB,在1.2V电源供电下的核心消耗功耗为16mW,核心电路面积仅为0.5mm2。Based on SMIC 0.13μm CMOS process,a high gain LNA for IR-UWB system was designed.The LNA operated at 6~9 GHz.Single ended input and differential output stage were used for input matching.Capacitor cross coupling（CCC）and current reuse techniques were also combined to achieve high gain under low power consumption.The simulation results showed that at the working frequency of 7.5GHz,the circuit achieved a peak power gain of 46 dB,a minimum noise figure（NF）of 3.05 dB,an input-referred return loss of-12.5dB,an output-referred return loss of-16.7dB,while the total power consumption was 16 mW at 1.2Vpower supply,and the core area was only 0.5mm2.

关 键 词：超宽带芯片 低噪声放大器 射频集成电路 高增益 CMOS工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]