基于TCAD的45nm CMOS器件温度特性模拟  

Simulation for the Temperature Characteristics of 45nm CMOS Device Based on TCAD

作　　者：倪铭[1] 余金山[1] 马驰远[1] 

机构地区：[1]国防科技大学计算机学院,长沙410073

出　　处：《微电子学》2015年第1期119-124,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61176030)

摘　　要：基于TCAD工具,在一定温度范围内,对45nm器件的电特性与性能稳定性是否能保持进行了建模和模拟验证。通过TCAD工具建立工具流,在300~400 K温度下,实现对45nm CMOS器件I-V特性的模拟,以观察器件在一定温度范围内的特性曲线。通过与工艺文件对比表明,在25℃~127℃范围内,45nm CMOS器件的电特性能够保持一定的稳定性。Based on the TCAD tool,it had been modelled and verified under certain temperature range to investigate whether the electrical characteristics and stability of the 45 nm device could be maintained.After the flow of tools was created by TCAD tool,the simulation for I-Vcharacteristics of 45 nm CMOS devices was implemented at the temperature of 300-400 K,so characteristic curves of the device were observed under the certain temperature range.The characteristics were compared with the process documents,and the results showed that the stability of the electrical characteristics of 45 nm CMOS devices could be maintained in a certain extent from 25℃ to 127℃temperature range.

关 键 词：晶体管 特性曲线 温度范围 

分 类 号：TN432[电子电信—微电子学与固体电子学]