交流信号对亚微米CMOS集成电路可靠性的影响  

Effects of AC Signals on Sub-Micron CMOS IC Reliability

作　　者：黄炜[1] 付晓君[1] 刘凡[1] 刘伦才[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2015年第1期145-148,共4页Microelectronics

摘　　要：介绍了交流信号对亚微米CMOS集成电路可靠性的影响,重点分析了亚微米CMOS集成电路中交流应力下的热载流子效应、电迁移、栅氧化层介质击穿效应。通过与直流应力下器件可靠性的对比,分析交流信号与直流信号对亚微米CMOS集成电路可靠性影响的差异。Effects of AC signals on sub-micron CMOS IC reliability were introduced.The effects of hot carrier,electromigration and gate oxide breakdown under AC stress were analyzed.Compared with the effects of DC signals on device reliability,the difference between the effects of DC and AC stress on sub-micron CMOS IC reliability was investigated.

关 键 词：可靠性 热载流子效应 电迁移 氧化层击穿 交流影响 

分 类 号：TN432[电子电信—微电子学与固体电子学]