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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2015年第3期195-200,共6页Semiconductor Technology
摘 要:基于Ga As肖特基二极管工艺,研制了一款无源毫米波二倍频器单片微波集成电路(MMIC)。该电路的拓扑结构包含并联二极管对,输入巴伦和输入、输出匹配电路,其中输入巴伦为螺旋型Marchand巴伦,使电路输入输出端具有奇偶次谐波相互隔离的特点,不仅抑制了输出奇次谐波,而且增加了线间的耦合,显著减小了芯片的面积。在设计软件对电路进行仿真优化的基础上,经过实际流片并对芯片进行了测试,实现了输入功率为15 d Bm时,输出频率在44~60 GHz处,输出功率大于-1 d Bm,变频损耗小于16 d B,对基波和各次谐波抑制度大于30 d Bc的技术指标。芯片实际尺寸为1.45 mm×1.1 mm。Based on the Ga As Schottky diode technology, a passive millimeter wave frequency doubler monolithic microwave integrated circuit( MMIC) was developed. The topology strcture of the circuit included parallel diodes,input Balun,input and output matching network. The input Balun was designed as a spiral Marchand Balun so that the odd and even harmonics of the input and output were isolated. The odd harmonics of the input frequency was suppressed at the output port and the coupling was increased between the lines,at the same time the size of the MMIC was reduced remarkably. Through the simulation and optimization by the software,the MMIC was fabricated and tested. The results show that the output power is larger than- 1 d Bm,the conversion loss is less than 16 d B and each harmonic and fundamental frequency suppression is larger than 30 d Bc at the output frequency of 44 GHz to60 GHz,when the input power is 15 d Bm. The chip size is 1. 45 mm × 1. 1 mm.
关 键 词:单片微波集成电路(MMIC) 倍频器 肖特基二极管 砷化镓 巴伦 毫米波
分 类 号:TN43[电子电信—微电子学与固体电子学] TN771
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