Nd和Mg共掺杂钛酸铋铁电薄膜的电性能研究  

Composition-dependent Electrical Properties of Nd and Mg Cosubstituted Bismuth Titanate Films

作　　者：胡增顺[1,2] 晋玉星[1] 杨桦[3] 

机构地区：[1]开封大学公共计算机教研部,河南开封475004 [2]开封大学功能材料研究中心,河南开封475004 [3]开封大学信息工程学院,河南开封475004

出　　处：《合成材料老化与应用》2015年第1期63-66,共4页Synthetic Materials Aging and Application

基　　金：河南省教育厅自然科学研究计划项目(No.2011C430002)

摘　　要：利用化学溶液沉积法在Pt/Ti/Si O2/Si(100)基底和700℃条件下分别制备了Nd和Mg(不同浓度)共掺杂的钛酸铋薄膜Bi3.15Nd0.85Ti(3-x)Mg2xO12(BNTM)(x=0.00,0.06,0.10和0.14),并进行了这一系列薄膜的包括微结构、介电、铁电和漏电流等特性的研究和对比。发现当Mg含量为x=0.10时,薄膜具有较高的剩余极化强度(2Pr=33.40μC/cm2)和介电常数(ε=538,频率为1k Hz),其漏电流密度为10-8A/cm2。讨论了相关的物理机制。A series of Nd and Mg cosubstituted bismuth titanate films of Bi3. 15Nd0. 85Ti（ 3-x）Mg2xO12（ x = 0. 00,0. 06,0. 10 and 0. 14） have been prepared on Pt / Ti / Si O2/ Si（ 100） substrates at 700℃ by a chemical solution deposition technique,respectively. The structural evolution and ferroelectric properties of the as-deposited films were systematically investigated as a function of Mg composition x. It was found that an optimized Mg content,x = 0. 10,can greatly enhance the remnant polarization（ 2Pr= 33. 40μC / cm^2） and the dielectric constants（ ε = 538 at the frequency of 1k Hz） of the as-deposited films,while the leakage current was 10-8A / cm^2. The relevant physical mechanisms were discussed.

关 键 词：铁电薄膜 共掺杂 BNTM 化学溶液沉积法 

分 类 号：TB34[一般工业技术—材料科学与工程]