The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections  

作　　者：RAJABI Kamran 曹文彧 SHEN Tihan 季清斌 贺娟 杨薇 李磊 李丁 王琪 胡晓东 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University [2]Joule Physics Laboratory,School of Computing,Science and Engineering,College of Science and Technology,University of Salford [3]Dongguan Institute of Optoelectronics,Peking University

出　　处：《Chinese Physics Letters》2015年第2期143-147,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61334005,51272008 and 60990314;the Beijing Municipal Science and Technology Project under Grant No H030430020000;the National Basic Research Program of China under Grant Nos 2012CB619304 and 2012CB619306

摘　　要：Introducing a thin InGaN interlayer with a relatively lower indium content between the quantum well （QW） and barrier results in a step-like InxGa1-xN/GaN potential barrier on one side of the QW. This change in the active region leads to a significant shift in photolumineseence （PL） and electroluminescence （EL） emissions to a longer wavelength compared with the conventional QW based light-emitting diodes. More importantly, an improvement against efficiency droop and an enhancement in light output power at the high-current injection are observed in the modified light-emitting diode structures. The role of the inserted layer in these improvements is investigated by simulation in detail, which shows that the creation of more sublevels in the valence band and the increase of hole concentration inside QWs are the main reasons for these improvements.Introducing a thin InGaN interlayer with a relatively lower indium content between the quantum well （QW） and barrier results in a step-like InxGa1-xN/GaN potential barrier on one side of the QW. This change in the active region leads to a significant shift in photolumineseence （PL） and electroluminescence （EL） emissions to a longer wavelength compared with the conventional QW based light-emitting diodes. More importantly, an improvement against efficiency droop and an enhancement in light output power at the high-current injection are observed in the modified light-emitting diode structures. The role of the inserted layer in these improvements is investigated by simulation in detail, which shows that the creation of more sublevels in the valence band and the increase of hole concentration inside QWs are the main reasons for these improvements.

关 键 词：INGAN The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections 

分 类 号：O471.1[理学—半导体物理]