高功率脉冲磁控溅射等离子体特性与动力学研究进展（英文）  

Plasma characteristics and dynamics in a high power pulsed magnetron sputtering discharge

作　　者：夏原[1] 高方圆[1] 李光[1] 

机构地区：[1]中国科学院力学研究所,北京100190

出　　处：《中国科学院大学学报（中英文）》2015年第2期145-154,共10页Journal of University of Chinese Academy of Sciences

基　　金：Supported by the Research Equipment Development Project of Chinese Academy of Sciences(YZ201135)

摘　　要：高功率脉冲磁控溅射(HIPIMS)作为一项极具发展前途的物理气相沉积新技术,近年来引起学术界和工业界的广泛关注.HIPIMS技术(也被称为HPPMS)可以提供足够的放电功率来获得极高的电流密度,数值达到几个A·cm-2;同时,可以得到1019m-3量级的高密度等离子体.溅射过程中独特的等离子体特性表明了该技术的突出优势,因此可实现沉积过程的控制和薄膜性能的优化.文中对HIPIMS技术的IV放电特征,电源设计,以及溅射原子离化率进行深入分析.同时,回顾讨论等离子体时间空间演变规律,离化基团输运,薄膜沉积速率等问题的研究进展.High power impulse magnetron sputtering（ HIPIMS） is a promising technology that has drawn attention in both academia and industry in recent years. HIPIMS,also known as high power pulse magnetron sputtering,is a physical vapor deposition technique. The high power has been brought to extremely high discharge current density of several A·cm- 2and HIPIMS has been successfully developed to produce high plasma densities of the order of 1019m- 3. The plasma properties in sputtering process have shown the great advantages,which make it possible to control the deposition process and optimize the performance of films. In this paper,we show the I-V characteristics of discharge and the design of power supply,as well as the ionization rate of sputtered atoms. Furthermore,the spatial and the temporal evolution of plasma,the nonnormal transport of ionized species,and the deposition rate are reviewed.

关 键 词：HIPIMS HPPMS 等离子体动力学 放电特性 高离化率 

分 类 号：TB43[一般工业技术]